mo sf et s p rod uc t o v er v ie w www.vishay.com www.vishay.com vi s hay i nterte c hnolo g y, i nc . 600 v power mosfet s si h g22 n 60s- e 3 / si h g47 n 60s- e 3
vishay is adding to its super junction power mosfet family with new n-channel devices in the to-247 package, featuring ultra-low maximum on-resistance and low gate charge for an improved fgure of merit (fom). f eatures: ? high e ar capability ? improved r on x q g fgure of merit (fom) C 18.81 -nc (SIHG22N60S-E3) - sihp22n60s-e3, sihf22n60s-e3, and sihb22n60s-e3 also available C 15.12 -nc (sihg47n60s-e3) ? ultra-low r ds(on) ? ultra-low gate charge (q g ) ? 100 % avalanche tested ? dv/dt ruggedness ? compliant to rohs directive 2002/95/ec applications ? pfc power supply stages ? hard switching topologies ? solar inverters ? ups ? motor control ? lighting ? server telecom these devices are produced using vishay super junction technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation modes. 600 v power mosfet s SIHG22N60S-E3 / sihg47n60s-e3 part number v ds (v) v gs ( v) i ds (25 oc) (a) r ds(on) (m) q g (nc) SIHG22N60S-E3* 600 20 22 190 115 sihg47n60s-e3* 600 20 47 70 216 ctrl isolated dc/dc bias for controller drive inverter drive drive drive grid drive isolated dc/dc ctrl solar cell solar cell and inverter block diagram * * * * * www.vishay.com vishay intertechnology 1
600 v power mosfet s SIHG22N60S-E3 / sihg47n60s-e3 part number v ds (v) v gs ( v) i ds (25 oc) (a) r ds(on) (m) q g (nc) SIHG22N60S-E3* 600 20 22 190 115 sihg47n60s-e3* 600 20 47 70 216 telecom power supply block diagram server power supply block diagram motor c ontrol power supply block diagram pfc power factor correction optocoupler bridge recti?er pfc ctrl ctrl ctrl isolated dc/dc ctrl ctrl isolated dc/dc ctrl non-isolated dc/dc optocoupler 85 ~ 265 v ac 380 ~ 410 v 5 ~ 12 v 3.3 v 48 v point of load telecom brick module telecom recti?er ac input recti?ers and pfc bias supply ic v ac braking switch and 3 phase inverter controls and gate drive position sensing motor this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set f orth at www.vishay.com/doc?91000 * * * part number v ds (v) v gs ( v) i ds (25 oc) (a) r ds(on) (m) q g (nc) SIHG22N60S-E3* 600 20 22 190 115 sihg47n60s-e3* 600 20 47 70 216 part number v ds (v) v gs ( v) i ds (25 oc) (a) r ds(on) (m) q g (nc) SIHG22N60S-E3* 600 20 22 190 115 sihg47n60s-e3* 600 20 47 70 216 * * * * www.vishay.com vishay intertechnology 2
discrete semiconductors and passive components one of the worlds largest manufacturers of world w ide sale s conta c ts the americas united s tates vis hay americas one greenwich place shelton, c t 06484 united state s ph: +1-402-563-6866 fax: +1-402-563-6296 asia singapore vis hay intertechnology asia pte l td. 37a t ampines street 92 #07-00 singapore 528886 ph: +65-6788-6668 fax: +65-6788-0988 p.r. china vis hay china co., l td. 15d, sun tong infop ort plaza 55 huai hai west road shanghai 200030 p. r. china ph: +86-21-5258 5000 f ax: +86-21-5258 7979 jap an vis hay jap an co., ltd. shibu ya prestige bldg. 4f 3-12-22, shibu ya shibu ya-ku tokyo 150-0002 jap an ph: +81-3-5466-7150 f ax: +81-3-5466-7160 europe germany vis hay electronic gmbh geheimrat- rosenthal-str. 100 95100 selb germany ph: +49-9287-71-0 fax: +49-9287-70435 france vis hay s.a. 199, bl vd de la madeleine 06003 nice, cedex 1 france ph: +33-4-9337-2727 fax: +33-4-9337-2726 united kingdom vis hay l td. suite 6c, tower house st. catherine s cou rt sunderland enterpris e park sunderland sr5 3xj united kingdom ph: +44-191-516-8584 fax: +44-191-549-9556 semiconductors: rectifers ? high-power diodes and thyristors ? small-signal diodes ? zener and suppr essor diodes ? fets ? optoelectronics ? ics ? modules pa ssive components: resistive products ? magnetics ? capacitors vmn-pl0452-1105 www.vishay.com build into your vishay design
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